Contact
Send MessageFQB5P10TM_1
100V|4.5A (Tc)|3.75W (Ta), 40W (Tc)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount
MOSFET P-CH 100V 4.5A D2PAK
Specifications
- Brand
- ON Semiconductor
- Package
- D²PAK (TO-263AB)
- Packaging
- —
- Weight
- —
Total Inventory
422pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how FQB5P10TM_1 from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | ON Semiconductor | |
| Series | QFET® | |
| FET Type | P-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 100V | |
| Current - Continuous Drain (Id) @ 25°C | 4.5A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Rds On (Max) @ Id, Vgs | 1.05Ohm @ 2.25A, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 8.2nC @ 10V | |
| Vgs (Max) | ±30V | |
| Input Capacitance (Ciss) (Max) @ Vds | 250pF @ 25V | |
| FET Feature | - | |
| Power Dissipation (Max) | 3.75W (Ta), 40W (Tc) | |
| Operating Temperature | -55°C ~ 175°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | D²PAK (TO-263AB) | |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Recommended Products
0402 ANTI-SULFUR RES. , 0.5%, 71
CAP CER 390PF 1.2KV X7R 1812
CAP ALUM 560UF 20% 63V RADIAL
IC REG CTRLR ISO PWM 20-SOIC
IC GATE XOR 1CH 2-INP 6XSON
CONN IC DIP SOCKET 6POS GOLD
HEADER BERGSTIK
1MM MICRO STRIPS
CONN HEADER .079" 28POS
CONN PLUG HSNG MALE 2POS INLINE
Datasheet & Documents
fqb5p10tm.pdf
PDF Document · 9 pages
