FQB33N10LTM_1

100V|33A (Tc)|3.75W (Ta), 127W (Tc)

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MOSFET N-CH 100V 33A D2PAK

1,661pcs

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Purchase Quantity

MOQ: 1 pcs

Product Video

Manufacturer	ON Semiconductor
Series	QFET®
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	33A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	5V, 10V
Rds On (Max) @ Id, Vgs	52mOhm @ 16.5A, 10V
Vgs(th) (Max) @ Id	2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	40nC @ 5V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1630pF @ 25V
FET Feature	-
Power Dissipation (Max)	3.75W (Ta), 127W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	D²PAK (TO-263AB)
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB