Contact
Send MessageFQB2N80TM
800V|2.4A (Tc)|3.13W (Ta), 85W (Tc)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount
MOSFET N-CH 800V 2.4A D2PAK
Specifications
- Brand
- Fairchild/ON Semiconductor
- Package
- D2PAK (TO-263AB)
- Packaging
- —
- Weight
- —
Total Inventory
3,328pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how FQB2N80TM from Fairchild/ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | Fairchild/ON Semiconductor | |
| Series | QFET? | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 800V | |
| Current - Continuous Drain (Id) @ 25°C | 2.4A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Rds On (Max) @ Id, Vgs | 6.3 Ohm @ 900mA, 10V | |
| Vgs(th) (Max) @ Id | 5V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 15nC @ 10V | |
| Vgs (Max) | ±30V | |
| Input Capacitance (Ciss) (Max) @ Vds | 550pF @ 25V | |
| FET Feature | - | |
| Power Dissipation (Max) | 3.13W (Ta), 85W (Tc) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | D2PAK (TO-263AB) | |
| Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Recommended Products
RES 11K OHM 1/4W 1% AXIAL
IND PWR 15.0 H 1.10ADC PBC
FIXED IND 10UH 60MA 700 MOHM SMD
XTAL OSC XO 44.0000MHZ HCMOS SMD
MEMS OSC PRG SSXO LVCMOS DS 1.8V
CPS16-NC00A10-SNCSNCWF-RI0CBVAR-W1061-S
SWITCH PUSH SPST-NC 100MA 42V
FUSE HOLDR CART 600V 30A IN LINE
.100 X .100 EJECTOR HEADER ASSEM
CONN HEADER 58POS DUAL .100 TIN
M801 12C 12#16 SKT PLUG THRD
Datasheet & Documents
fqb2n80tm.pdf
PDF Document · 9 pages
