FQB2N50TM_1

500V|2.1A (Tc)|3.13W (Ta), 55W (Tc)

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MOSFET N-CH 500V 2.1A D2PAK

369pcs

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Purchase Quantity

MOQ: 1 pcs

Product Video

Manufacturer	ON Semiconductor
Series	QFET®
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	500V
Current - Continuous Drain (Id) @ 25°C	2.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	5.3Ohm @ 1.05A, 10V
Vgs(th) (Max) @ Id	5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	8nC @ 10V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	230pF @ 25V
FET Feature	-
Power Dissipation (Max)	3.13W (Ta), 55W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	D²PAK (TO-263AB)
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB