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FQB19N10TM

100V|19A (Tc)|3.75W (Ta), 75W (Tc)
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MOSFET N-CH 100V 19A D2PAK

Specifications

Brand
Fairchild/ON Semiconductor
Package
D2PAK (TO-263AB)
Packaging
—
Weight
—

Total Inventory

69,600pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how FQB19N10TM from Fairchild/ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
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Technical Specifications

ManufacturerFairchild/ON Semiconductor
SeriesQFET?
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C19A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs100 mOhm @ 9.5A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs25nC @ 10V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds780pF @ 25V
FET Feature-
Power Dissipation (Max)3.75W (Ta), 75W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD2PAK (TO-263AB)
Package / CaseTO-263-3, D2Pak (2 Leads + Tab), TO-263AB

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Datasheet & Documents

fqb19n10tm.pdf

PDF Document · 9 pages

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