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FQB10N60CTM

600V|9.5A (Tc)|3.13W (Ta), 156W (Tc)
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MOSFET N-CH 600V 9.5A D2PAK

Specifications

Brand
Fairchild/ON Semiconductor
Package
D2PAK (TO-263AB)
Packaging
—
Weight
—

Total Inventory

7,680pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how FQB10N60CTM from Fairchild/ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerFairchild/ON Semiconductor
SeriesQFET?
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C9.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs730 mOhm @ 4.75A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs57nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds2040pF @ 25V
FET Feature-
Power Dissipation (Max)3.13W (Ta), 156W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD2PAK (TO-263AB)
Package / CaseTO-263-3, D2Pak (2 Leads + Tab), TO-263AB

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Datasheet & Documents

fqb10n60ctm.pdf

PDF Document · 9 pages

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