Heisener Electronics
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FQAF10N80

800V|6.7A (Tc)|113W (Tc)
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MOSFET N-CH 800V 6.7A TO-3PF

Specifications

Brand
Fairchild/ON Semiconductor
Package
TO-3PF
Packaging
—
Weight
—

Total Inventory

6,544pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how FQAF10N80 from Fairchild/ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerFairchild/ON Semiconductor
SeriesQFET?
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)800V
Current - Continuous Drain (Id) @ 25°C6.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1.05 Ohm @ 3.35A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs71nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds2700pF @ 25V
FET Feature-
Power Dissipation (Max)113W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-3PF
Package / CaseSC-94

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Datasheet & Documents

fqaf10n80.pdf

PDF Document · 8 pages

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