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FQA85N06

60V|100A (Tc)|214W (Tc)
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MOSFET N-CH 60V 100A TO-3P

Specifications

Brand
Fairchild/ON Semiconductor
Package
TO-3PN
Packaging
—
Weight
—

Total Inventory

103,464pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how FQA85N06 from Fairchild/ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerFairchild/ON Semiconductor
SeriesQFET?
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs10 mOhm @ 50A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs112nC @ 10V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds4120pF @ 25V
FET Feature-
Power Dissipation (Max)214W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-3PN
Package / CaseTO-3P-3, SC-65-3

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Datasheet & Documents

fqa85n06.pdf

PDF Document · 8 pages

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