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FQA17P10

100V|18A (Tc)|120W (Tc)
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MOSFET P-CH 100V 18A TO-3P

Specifications

Brand
Fairchild/ON Semiconductor
Package
TO-3P
Packaging
—
Weight
—

Total Inventory

8,412pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how FQA17P10 from Fairchild/ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
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Technical Specifications

ManufacturerFairchild/ON Semiconductor
SeriesQFET?
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C18A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs190 mOhm @ 9A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs39nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1100pF @ 25V
FET Feature-
Power Dissipation (Max)120W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-3P
Package / CaseTO-3P-3, SC-65-3

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Datasheet & Documents

fqa17p10.pdf

PDF Document · 8 pages

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