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FQA10N60C

600V|10A (Tc)|192W (Tc)
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MOSFET N-CH 600V 10A TO-3P

Specifications

Brand
Fairchild/ON Semiconductor
Package
TO-3PN
Packaging
—
Weight
—

Total Inventory

16,188pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how FQA10N60C from Fairchild/ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
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Technical Specifications

ManufacturerFairchild/ON Semiconductor
SeriesQFET?
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C10A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs730 mOhm @ 5A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs57nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds2040pF @ 25V
FET Feature-
Power Dissipation (Max)192W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-3PN
Package / CaseTO-3P-3, SC-65-3

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Datasheet & Documents

fqa10n60c.pdf

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