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Send MessageFP50R07N2E4B11BOSA1
650V|70A|-
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IGBT MODULE VCES 600V 50A
Specifications
- Brand
- Infineon Technologies
- Package
- Module
- Packaging
- —
- Weight
- —
Total Inventory
107pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how FP50R07N2E4B11BOSA1 from Infineon Technologies fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | Infineon Technologies | |
| Series | - | |
| IGBT Type | Trench Field Stop | |
| Configuration | Three Phase Inverter | |
| Voltage - Collector Emitter Breakdown (Max) | 650V | |
| Current - Collector (Ic) (Max) | 70A | |
| Power - Max | - | |
| Vce(on) (Max) @ Vge, Ic | 1.95V @ 15V, 50A | |
| Current - Collector Cutoff (Max) | 1mA | |
| Input Capacitance (Cies) @ Vce | 3.1nF @ 25V | |
| Input | Standard | |
| NTC Thermistor | Yes | |
| Operating Temperature | -40°C ~ 150°C | |
| Mounting Type | Chassis Mount | |
| Package / Case | Module | |
| Supplier Device Package | Module |
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Datasheet & Documents
fp50r07n2e4b11bosa1.pdf
PDF Document · 12 pages
