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150V|53A|180W
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MOSFET 2N-CH 150V 53A I4-PAC
Specifications
- Brand
- IXYS
- Package
- i4-Pac™-5
- Packaging
- —
- Weight
- —
Total Inventory
246pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how FMM110-015X2F from IXYS fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | IXYS | |
| Series | GigaMOS™, HiPerFET™, TrenchT2™ | |
| FET Type | 2 N-Channel (Dual) | |
| FET Feature | Standard | |
| Drain to Source Voltage (Vdss) | 150V | |
| Current - Continuous Drain (Id) @ 25°C | 53A | |
| Rds On (Max) @ Id, Vgs | 20mOhm @ 55A, 10V | |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 150nC @ 10V | |
| Input Capacitance (Ciss) (Max) @ Vds | 8600pF @ 25V | |
| Power - Max | 180W | |
| Operating Temperature | -55°C ~ 175°C (TJ) | |
| Mounting Type | Through Hole | |
| Package / Case | i4-Pac™-5 | |
| Supplier Device Package | ISOPLUS i4-PAC™ |
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Datasheet & Documents
fmm110-015x2f.pdf
PDF Document · 6 pages
