Heisener Electronics
BOM

FJY3012R_1

40V|100mA|200mW
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

TRANS PREBIAS NPN 200MW SOT523F

Specifications

Brand
ON Semiconductor
Package
SC-89, SOT-490
Packaging
—
Weight
—

Total Inventory

440pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how FJY3012R_1 from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
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  • Dedicated application engineering support

Technical Specifications

ManufacturerON Semiconductor
Series-
Transistor TypeNPN - Pre-Biased
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)40V
Resistor - Base (R1)47 kOhms
Resistor - Emitter Base (R2)-
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic300mV @ 1mA, 10mA
Current - Collector Cutoff (Max)100nA (ICBO)
Frequency - Transition250MHz
Power - Max200mW
Mounting TypeSurface Mount
Package / CaseSC-89, SOT-490
Supplier Device PackageSOT-523F

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Datasheet & Documents

fjy3012r.pdf

PDF Document · 4 pages

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Datasheet Preview

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