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FGP20N6S2D_1

600V|28A|125W
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IGBT 600V 28A 125W TO220AB

Specifications

Brand
ON Semiconductor
Package
TO-220-3
Packaging
—
Weight
—

Total Inventory

254pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how FGP20N6S2D_1 from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerON Semiconductor
Series-
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)28A
Current - Collector Pulsed (Icm)40A
Vce(on) (Max) @ Vge, Ic2.7V @ 15V, 7A
Power - Max125W
Switching Energy25µJ (on), 58µJ (off)
Input TypeStandard
Gate Charge30nC
Td (on/off) @ 25°C7.7ns/87ns
Test Condition390V, 7A, 25Ohm, 15V
Reverse Recovery Time (trr)31ns
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-220-3
Supplier Device PackageTO-220-3

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Datasheet & Documents

fgp20n6s2d.pdf

PDF Document · 9 pages

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