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650V|120A|306W
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IGBT 650V 120A 306W TO-3PN
Specifications
- Brand
- ON Semiconductor
- Package
- TO-3P-3, SC-65-3
- Packaging
- —
- Weight
- —
Total Inventory
327pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how FGA6560WDF_1 from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | ON Semiconductor | |
| Series | - | |
| IGBT Type | Trench Field Stop | |
| Voltage - Collector Emitter Breakdown (Max) | 650V | |
| Current - Collector (Ic) (Max) | 120A | |
| Current - Collector Pulsed (Icm) | 180A | |
| Vce(on) (Max) @ Vge, Ic | 2.3V @ 15V, 60A | |
| Power - Max | 306W | |
| Switching Energy | 2.46mJ (on), 520µJ (off) | |
| Input Type | Standard | |
| Gate Charge | 84nC | |
| Td (on/off) @ 25°C | 25.6ns/71ns | |
| Test Condition | 400V, 60A, 6Ohm, 15V | |
| Reverse Recovery Time (trr) | 110ns | |
| Operating Temperature | -55°C ~ 175°C (TJ) | |
| Mounting Type | Through Hole | |
| Package / Case | TO-3P-3, SC-65-3 | |
| Supplier Device Package | TO-3PN |
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Datasheet & Documents
fga6560wdf.pdf
PDF Document · 10 pages
