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650V|80A|231W
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IGBT 650V 80A 231W TO3PN
Specifications
- Brand
- ON Semiconductor
- Package
- TO-3P-3, SC-65-3
- Packaging
- —
- Weight
- —
Total Inventory
312pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how FGA40T65UQDF_1 from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
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- Dedicated application engineering support
Technical Specifications
| Manufacturer | ON Semiconductor | |
| Series | - | |
| IGBT Type | NPT | |
| Voltage - Collector Emitter Breakdown (Max) | 650V | |
| Current - Collector (Ic) (Max) | 80A | |
| Current - Collector Pulsed (Icm) | 120A | |
| Vce(on) (Max) @ Vge, Ic | 1.67V @ 15V, 40A | |
| Power - Max | 231W | |
| Switching Energy | 989µJ (on), 310µJ (off) | |
| Input Type | Standard | |
| Gate Charge | 306nC | |
| Td (on/off) @ 25°C | 32ns/271ns | |
| Test Condition | 400V, 40A, 6Ohm, 15V | |
| Reverse Recovery Time (trr) | 89ns | |
| Operating Temperature | -55°C ~ 175°C (TJ) | |
| Mounting Type | Through Hole | |
| Package / Case | TO-3P-3, SC-65-3 | |
| Supplier Device Package | TO-3PN |
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Datasheet & Documents
fga40t65uqdf.pdf
PDF Document · 11 pages
