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650V|10A
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SIC DIODE 650V
Specifications
- Brand
- ON Semiconductor
- Package
- TO-220-2
- Packaging
- —
- Weight
- —
Total Inventory
187pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how FFSP1065B-F085 from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | ON Semiconductor | |
| Series | Automotive, AEC-Q101 | |
| Diode Type | Silicon Carbide Schottky | |
| Voltage - DC Reverse (Vr) (Max) | 650V | |
| Current - Average Rectified (Io) | 10A | |
| Voltage - Forward (Vf) (Max) @ If | 1.7V @ 10A | |
| Speed | No Recovery Time > 500mA (Io) | |
| Reverse Recovery Time (trr) | 0ns | |
| Current - Reverse Leakage @ Vr | 40µA @ 650V | |
| Capacitance @ Vr, F | 421pF @ 1V, 100kHz | |
| Mounting Type | Through Hole | |
| Package / Case | TO-220-2 | |
| Supplier Device Package | TO-220-2 | |
| Operating Temperature - Junction | -55°C ~ 175°C |
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Datasheet & Documents
ffsp1065b-f085.pdf
PDF Document · 6 pages
