Heisener Electronics
BOM

FF2MR12KM1HOSA1

1200V (1.2kV)|500A (Tc)|-
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

SIC 2N-CH 1200V 500A AG-62MM

Specifications

Brand
Infineon Technologies
Package
Module
Packaging
—
Weight
—

Total Inventory

30pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how FF2MR12KM1HOSA1 from Infineon Technologies fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
  • Competitive pricing & global fast delivery
  • Dedicated application engineering support

Technical Specifications

ManufacturerInfineon Technologies
SeriesCoolSiC™
FET TypeSilicon Carbide (SiC)
FET Feature-
Drain to Source Voltage (Vdss)1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C500A (Tc)
Rds On (Max) @ Id, Vgs2.13mOhm @ 500A, 15V
Vgs(th) (Max) @ Id5.15V @ 224mA
Gate Charge (Qg) (Max) @ Vgs1340nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds39700pF @ 800V
Power - Max-
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeChassis Mount
Package / CaseModule
Supplier Device PackageAG-62MM

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