Heisener Electronics
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FDZ661PZ_1

20V|2.6A (Ta)|1.3W (Ta)
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MOSFET P-CH 20V 2.6A 4-WLCSP

Specifications

Brand
ON Semiconductor
Package
4-WLCSP (0.8x0.8)
Packaging
—
Weight
—

Total Inventory

260pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how FDZ661PZ_1 from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerON Semiconductor
SeriesPowerTrench®
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C2.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)1.5V, 4.5V
Rds On (Max) @ Id, Vgs140mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs8.8nC @ 4.5V
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds555pF @ 10V
FET Feature-
Power Dissipation (Max)1.3W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package4-WLCSP (0.8x0.8)
Package / Case4-XFBGA, WLCSP

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Datasheet & Documents

fdz661pz.pdf

PDF Document · 9 pages

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