Heisener Electronics
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FDZ201N_1

20V|9A (Ta)|2W (Ta)
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MOSFET N-CH 20V 9A BGA

Specifications

Brand
ON Semiconductor
Package
12-BGA (2x2.5)
Packaging
—
Weight
—

Total Inventory

236pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how FDZ201N_1 from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerON Semiconductor
SeriesPowerTrench®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C9A (Ta)
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Rds On (Max) @ Id, Vgs18mOhm @ 9A, 4.5V
Vgs(th) (Max) @ Id1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs15nC @ 4.5V
Vgs (Max)±12V
Input Capacitance (Ciss) (Max) @ Vds1127pF @ 10V
FET Feature-
Power Dissipation (Max)2W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package12-BGA (2x2.5)
Package / Case12-WFBGA

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Datasheet & Documents

fdz201n.pdf

PDF Document · 6 pages

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Datasheet Preview

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