Heisener Electronics
BOM

FDZ191P_P

20V|3A (Ta)|1.9W (Ta)
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MOSFET P-CH 20V 3A 6WLCSP

Specifications

Brand
ON Semiconductor
Package
6-WLCSP (1.0x1.5)
Packaging
—
Weight
—

Total Inventory

381pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how FDZ191P_P from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerON Semiconductor
SeriesPowerTrench®
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)1.5V, 4.5V
Rds On (Max) @ Id, Vgs85mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs13nC @ 10V
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds800pF @ 10V
FET Feature-
Power Dissipation (Max)1.9W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package6-WLCSP (1.0x1.5)
Package / Case6-UFBGA, WLCSP

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