Heisener Electronics
BOM

FDY302NZ_1

20V|600mA (Ta)|625mW (Ta)
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MOSFET N-CH 20V SC-89-3

Specifications

Brand
ON Semiconductor
Package
SC-89-3
Packaging
—
Weight
—

Total Inventory

26,264pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how FDY302NZ_1 from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerON Semiconductor
SeriesPowerTrench®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C600mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Rds On (Max) @ Id, Vgs300mOhm @ 600mA, 4.5V
Vgs(th) (Max) @ Id1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs1.1nC @ 4.5V
Vgs (Max)±12V
Input Capacitance (Ciss) (Max) @ Vds60pF @ 10V
FET Feature-
Power Dissipation (Max)625mW (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSC-89-3
Package / CaseSC-89, SOT-490

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Datasheet & Documents

fdy302nz.pdf

PDF Document · 8 pages

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