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FDV302P

25V|120mA (Ta)|350mW (Ta)
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MOSFET P-CH 25V 120MA SOT-23

Specifications

Brand
Fairchild/ON Semiconductor
Package
SOT-23
Packaging
—
Weight
—

Total Inventory

1,506,552pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how FDV302P from Fairchild/ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerFairchild/ON Semiconductor
Series-
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)25V
Current - Continuous Drain (Id) @ 25°C120mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)2.7V, 4.5V
Rds On (Max) @ Id, Vgs10 Ohm @ 200mA, 4.5V
Vgs(th) (Max) @ Id1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs0.31nC @ 4.5V
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds11pF @ 10V
FET Feature-
Power Dissipation (Max)350mW (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSOT-23
Package / CaseTO-236-3, SC-59, SOT-23-3

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Datasheet & Documents

fdv302p.pdf

PDF Document · 5 pages

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