Heisener Electronics
BOM

FDU8882_1

30V|12.6A (Ta), 55A (Tc)|55W (Tc)
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MOSFET N-CH 30V 55A I-PAK

Specifications

Brand
ON Semiconductor
Package
I-PAK
Packaging
—
Weight
—

Total Inventory

420pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how FDU8882_1 from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
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Technical Specifications

ManufacturerON Semiconductor
SeriesPowerTrench®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C12.6A (Ta), 55A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs11.5mOhm @ 35A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs33nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1260pF @ 15V
FET Feature-
Power Dissipation (Max)55W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI-PAK
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA

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Datasheet & Documents

fdu8882.pdf

PDF Document · 13 pages

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Datasheet Preview

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