Heisener Electronics
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FDU6512A_1

20V|10.7A (Ta), 36A (Tc)|3.8W (Ta), 43W (Tc)
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MOSFET N-CH 20V 10.7A I-PAK

Specifications

Brand
ON Semiconductor
Package
I-PAK
Packaging
—
Weight
—

Total Inventory

306pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how FDU6512A_1 from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerON Semiconductor
SeriesPowerTrench®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C10.7A (Ta), 36A (Tc)
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Rds On (Max) @ Id, Vgs21mOhm @ 10.7A, 4.5V
Vgs(th) (Max) @ Id1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs19nC @ 4.5V
Vgs (Max)±12V
Input Capacitance (Ciss) (Max) @ Vds1082pF @ 10V
FET Feature-
Power Dissipation (Max)3.8W (Ta), 43W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI-PAK
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA

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Datasheet & Documents

fdu6512a.pdf

PDF Document · 5 pages

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Datasheet Preview

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