Heisener Electronics
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FDT458P_1

30V|3.4A (Ta)|3W (Ta)
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MOSFET P-CH 30V 3.4A SOT-223

Specifications

Brand
ON Semiconductor
Package
SOT-223-4
Packaging
—
Weight
—

Total Inventory

12,577pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how FDT458P_1 from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerON Semiconductor
SeriesPowerTrench®
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C3.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs130mOhm @ 3.4A, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs3.5nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds205pF @ 15V
FET Feature-
Power Dissipation (Max)3W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSOT-223-4
Package / CaseTO-261-4, TO-261AA

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Datasheet & Documents

fdt458p.pdf

PDF Document · 7 pages

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Datasheet Preview

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