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FDS86267P

150V|2.2A (Ta)|1W (Ta)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

MOSFET P-CH 150V

Specifications

Brand
Fairchild/ON Semiconductor
Package
8-SO
Packaging
—
Weight
—

Total Inventory

41,580pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how FDS86267P from Fairchild/ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
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Technical Specifications

ManufacturerFairchild/ON Semiconductor
SeriesPowerTrench?
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)150V
Current - Continuous Drain (Id) @ 25°C2.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Rds On (Max) @ Id, Vgs255 mOhm @ 2.2A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs16nC @ 10V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds1130pF @ 75V
FET Feature-
Power Dissipation (Max)1W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-SO
Package / Case8-SOIC (0.154", 3.90mm Width)

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Datasheet & Documents

fds86267p.pdf

PDF Document · 7 pages

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