Heisener Electronics
BOM

FDS8333C_1

30V|4.1A, 3.4A|900mW
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

MOSFET N/P-CH 30V 8SOIC

Specifications

Brand
ON Semiconductor
Package
8-SOIC (0.154", 3.90mm Width)
Packaging
—
Weight
—

Total Inventory

478pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how FDS8333C_1 from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerON Semiconductor
SeriesPowerTrench®
FET TypeN and P-Channel
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C4.1A, 3.4A
Rds On (Max) @ Id, Vgs80mOhm @ 4.1A, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs6.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds282pF @ 10V
Power - Max900mW
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SOIC

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Datasheet & Documents

fds8333c.pdf

PDF Document · 8 pages

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