Heisener Electronics
BOM

FDS6912A_1

30V|6A|900mW
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

MOSFET 2N-CH 30V 6A 8SOIC

Specifications

Brand
ON Semiconductor
Package
8-SOIC (0.154", 3.90mm Width)
Packaging
—
Weight
—

Total Inventory

8,679pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how FDS6912A_1 from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
  • Competitive pricing & global fast delivery
  • Dedicated application engineering support

Technical Specifications

ManufacturerON Semiconductor
SeriesPowerTrench®
FET Type2 N-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C6A
Rds On (Max) @ Id, Vgs28mOhm @ 6A, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs8.1nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds575pF @ 15V
Power - Max900mW
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SOIC

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Datasheet & Documents

fds6912a.pdf

PDF Document · 5 pages

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Datasheet Preview

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