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FDS6875_1

20V|6A|900mW
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MOSFET 2P-CH 20V 6A 8SOIC

Specifications

Brand
ON Semiconductor
Package
8-SOIC (0.154", 3.90mm Width)
Packaging
—
Weight
—

Total Inventory

9,400pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how FDS6875_1 from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerON Semiconductor
SeriesPowerTrench®
FET Type2 P-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C6A
Rds On (Max) @ Id, Vgs30mOhm @ 6A, 4.5V
Vgs(th) (Max) @ Id1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs31nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds2250pF @ 10V
Power - Max900mW
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SOIC

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Datasheet & Documents

fds6875.pdf

PDF Document · 5 pages

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Datasheet Preview

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