Heisener Electronics
BOM

FDS3572_1

80V|8.9A (Ta)|2.5W (Ta)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

MOSFET N-CH 80V 8.9A 8SOIC

Specifications

Brand
ON Semiconductor
Package
8-SOIC
Packaging
—
Weight
—

Total Inventory

6,095pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how FDS3572_1 from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
  • Competitive pricing & global fast delivery
  • Dedicated application engineering support

Technical Specifications

ManufacturerON Semiconductor
SeriesPowerTrench®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)80V
Current - Continuous Drain (Id) @ 25°C8.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Rds On (Max) @ Id, Vgs16mOhm @ 8.9A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs41nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1990pF @ 25V
FET Feature-
Power Dissipation (Max)2.5W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-SOIC
Package / Case8-SOIC (0.154", 3.90mm Width)

Recommended Products

1206Y0500271JCT

1206Y0500271JCT

CAP CER 270PF 50V C0G/NP0 1206

5530711811F

5530711811F

LED CBI 3MM BI-LVL RD/GRN RD/GRN

W58-XC1A4A-16

W58-XC1A4A-16

CIR BRKR THRM 16A 250VAC 50VDC

MUR160HB0G

MUR160HB0G

DIODE, HIGH EFFICIENT, 1A, 600V,

929665-09-13-EU

929665-09-13-EU

CONN HEADER 26POS STR DUAL .100"

HDWM-11-01-T-D-200

HDWM-11-01-T-D-200

.050" BOARD SPACERS

DW-11-09-F-S-410

DW-11-09-F-S-410

.025" BOARD SPACERS

JBXFD2J03FCSDSMR

JBXFD2J03FCSDSMR

CONN PLUG 3POS INLINE SKT CRIMP

ECC06DPDI

ECC06DPDI

CONN EDGE DUAL FMALE 12POS 0.100

Datasheet & Documents

fds3572.pdf

PDF Document · 13 pages

Download

Datasheet Preview

Download