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200V|3.9A (Ta)|2.5W (Ta)
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MOSFET N-CH 200V 3.9A 8-SOIC
Specifications
- Brand
- ON Semiconductor
- Package
- 8-SOIC
- Packaging
- —
- Weight
- —
Total Inventory
14,619pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how FDS2672_1 from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
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Technical Specifications
| Manufacturer | ON Semiconductor | |
| Series | UltraFET™ | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 200V | |
| Current - Continuous Drain (Id) @ 25°C | 3.9A (Ta) | |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V | |
| Rds On (Max) @ Id, Vgs | 70mOhm @ 3.9A, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 46nC @ 10V | |
| Vgs (Max) | ±20V | |
| Input Capacitance (Ciss) (Max) @ Vds | 2535pF @ 100V | |
| FET Feature | - | |
| Power Dissipation (Max) | 2.5W (Ta) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | 8-SOIC | |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
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Datasheet & Documents
fds2672.pdf
PDF Document · 8 pages
