Heisener Electronics
BOM

FDR8305N_1

20V|4.5A|800mW
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

MOSFET 2N-CH 20V 4.5A SSOT-8

Specifications

Brand
ON Semiconductor
Package
8-LSOP (0.130", 3.30mm Width)
Packaging
—
Weight
—

Total Inventory

456pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how FDR8305N_1 from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
  • Competitive pricing & global fast delivery
  • Dedicated application engineering support

Technical Specifications

ManufacturerON Semiconductor
SeriesPowerTrench®
FET Type2 N-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C4.5A
Rds On (Max) @ Id, Vgs22mOhm @ 4.5A, 4.5V
Vgs(th) (Max) @ Id1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs23nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds1600pF @ 10V
Power - Max800mW
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-LSOP (0.130", 3.30mm Width)
Supplier Device PackageSuperSOT™-8

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Datasheet & Documents

fdr8305n.pdf

PDF Document · 5 pages

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