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20V|11.2A (Ta)|1.8W (Ta)
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MOSFET N-CH 20V 11.2A SSOT-8
Specifications
- Brand
- ON Semiconductor
- Package
- SuperSOT™-8
- Packaging
- —
- Weight
- —
Total Inventory
231pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how FDR6580_1 from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
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Technical Specifications
| Manufacturer | ON Semiconductor | |
| Series | PowerTrench® | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 20V | |
| Current - Continuous Drain (Id) @ 25°C | 11.2A (Ta) | |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V | |
| Rds On (Max) @ Id, Vgs | 9mOhm @ 11.2A, 4.5V | |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 48nC @ 4.5V | |
| Vgs (Max) | ±8V | |
| Input Capacitance (Ciss) (Max) @ Vds | 3829pF @ 10V | |
| FET Feature | - | |
| Power Dissipation (Max) | 1.8W (Ta) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | SuperSOT™-8 | |
| Package / Case | 8-LSOP (0.130", 3.30mm Width) |
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Datasheet & Documents
fdr6580.pdf
PDF Document · 6 pages
