Heisener Electronics
BOM

FDR6580

20V|11.2A (Ta)|1.8W (Ta)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

MOSFET N-CH 20V 11.2A SSOT-8

Specifications

Brand
Fairchild/ON Semiconductor
Package
SuperSOT?-8
Packaging
—
Weight
—

Total Inventory

25,680pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how FDR6580 from Fairchild/ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerFairchild/ON Semiconductor
SeriesPowerTrench?
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C11.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Rds On (Max) @ Id, Vgs9 mOhm @ 11.2A, 4.5V
Vgs(th) (Max) @ Id1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs48nC @ 4.5V
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds3829pF @ 10V
FET Feature-
Power Dissipation (Max)1.8W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSuperSOT?-8
Package / Case8-SMD, Gull Wing

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Datasheet & Documents

fdr6580.pdf

PDF Document · 6 pages

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