
Contact
Send MessageFDP8D5N10C
100V|76A (Tc)|2.4W (Ta), 107W (Tc)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount
FET ENGR DEV-NOT REL
Specifications
- Brand
- ON Semiconductor
- Package
- TO-220-3
- Packaging
- —
- Weight
- —
Total Inventory
292pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how FDP8D5N10C from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | ON Semiconductor | |
| Series | PowerTrench® | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 100V | |
| Current - Continuous Drain (Id) @ 25°C | 76A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Rds On (Max) @ Id, Vgs | 8.5mOhm @ 76A, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 130µA | |
| Gate Charge (Qg) (Max) @ Vgs | 34nC @ 10V | |
| Vgs (Max) | ±20V | |
| Input Capacitance (Ciss) (Max) @ Vds | 2475pF @ 50V | |
| FET Feature | - | |
| Power Dissipation (Max) | 2.4W (Ta), 107W (Tc) | |
| Operating Temperature | -55°C ~ 175°C (TJ) | |
| Mounting Type | Through Hole | |
| Supplier Device Package | TO-220-3 | |
| Package / Case | TO-220-3 |
Recommended Products

MEMS OSC XO 30.0000MHZ H/LV-CMOS

MP CONFIGURABLE POWER SUPPLY

IC CPLD 256MC 15NS 272BGA

IC COMP DUAL LO PWR 8-SOIC

MOSFET N-CH 650V 15A TO-220F

.025 SQ. TERMINAL STRIPS

CONN RCPT MALE 55POS GOLD CRIMP

CONN RCPT 55POS JAM NUT W/SKT

CONN ISA FEMALE 62POS 0.100 GOLD

CONN EDGE DUAL FMALE 30POS 0.100
Datasheet & Documents
fdp8d5n10c.pdf
PDF Document · 7 pages










