Heisener Electronics
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FDP8030L_1

30V|80A (Ta)|187W (Tc)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

MOSFET N-CH 30V 80A TO220

Specifications

Brand
ON Semiconductor
Package
TO-220-3
Packaging
—
Weight
—

Total Inventory

1,599pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how FDP8030L_1 from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerON Semiconductor
SeriesPowerTrench®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C80A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs3.5mOhm @ 80A, 10V
Vgs(th) (Max) @ Id2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs170nC @ 5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds10500pF @ 15V
FET Feature-
Power Dissipation (Max)187W (Tc)
Operating Temperature-65°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220-3
Package / CaseTO-220-3

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Datasheet & Documents

fdb8030l.pdf

PDF Document · 5 pages

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Datasheet Preview

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