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FDN5632N-F085

60V|1.7A (Ta)|1.1W (Ta)
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MOSFET N-CH 60V 1.7A SSOT3

Specifications

Brand
ON Semiconductor
Package
SuperSOT-3
Packaging
—
Weight
—

Total Inventory

392pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how FDN5632N-F085 from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerON Semiconductor
SeriesAutomotive, AEC-Q101, PowerTrench®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C1.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs82mOhm @ 1.7A, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs12nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds475pF @ 15V
FET Feature-
Power Dissipation (Max)1.1W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSuperSOT-3
Package / CaseTO-236-3, SC-59, SOT-23-3

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Datasheet & Documents

fdn5632n-f085.pdf

PDF Document · 6 pages

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