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FDN359BN_1

30V|2.7A (Ta)|500mW (Ta)
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MOSFET N-CH 30V 2.7A SSOT3

Specifications

Brand
ON Semiconductor
Package
SuperSOT-3
Packaging
—
Weight
—

Total Inventory

37,882pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how FDN359BN_1 from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
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Technical Specifications

ManufacturerON Semiconductor
SeriesPowerTrench®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C2.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs46mOhm @ 2.7A, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs7nC @ 5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds650pF @ 15V
FET Feature-
Power Dissipation (Max)500mW (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSuperSOT-3
Package / CaseTO-236-3, SC-59, SOT-23-3

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Datasheet & Documents

fdn359bn.pdf

PDF Document · 8 pages

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Datasheet Preview

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