Heisener Electronics
BOM

FDMS8660AS_1

30V|28A (Ta), 49A (Tc)|2.5W (Ta), 104W (Tc)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

MOSFET N-CH 30V 28A POWER56

Specifications

Brand
ON Semiconductor
Package
8-PQFN (5x6)
Packaging
—
Weight
—

Total Inventory

453pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how FDMS8660AS_1 from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerON Semiconductor
SeriesPowerTrench®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C28A (Ta), 49A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs2.1mOhm @ 28A, 10V
Vgs(th) (Max) @ Id3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs83nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds5865pF @ 15V
FET Feature-
Power Dissipation (Max)2.5W (Ta), 104W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-PQFN (5x6)
Package / Case8-PowerTDFN

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Datasheet & Documents

fdms8660as.pdf

PDF Document · 8 pages

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