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FDMS86263P_1

150V|4.4A (Ta), 22A (Tc)|2.5W (Ta), 104W (Tc)
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MOSFET P-CH 150V 22A POWER 56

Specifications

Brand
ON Semiconductor
Package
8-PQFN (5x6)
Packaging
—
Weight
—

Total Inventory

217pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how FDMS86263P_1 from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerON Semiconductor
SeriesPowerTrench®
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)150V
Current - Continuous Drain (Id) @ 25°C4.4A (Ta), 22A (Tc)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Rds On (Max) @ Id, Vgs53mOhm @ 4.4A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs63nC @ 10V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds3905pF @ 75V
FET Feature-
Power Dissipation (Max)2.5W (Ta), 104W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-PQFN (5x6)
Package / Case8-PowerTDFN

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Datasheet & Documents

fdms86263p.pdf

PDF Document · 8 pages

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Datasheet Preview

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