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FDMS86180_1

100V|151A (Tc)|138W (Tc)
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MOSFET N-CH 100V 151A 8PQFN

Specifications

Brand
ON Semiconductor
Package
Power56
Packaging
—
Weight
—

Total Inventory

187pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how FDMS86180_1 from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerON Semiconductor
SeriesPowerTrench®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C151A (Tc)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Rds On (Max) @ Id, Vgs3.2mOhm @ 67A, 10V
Vgs(th) (Max) @ Id4V @ 370µA
Gate Charge (Qg) (Max) @ Vgs54nC @ 6V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds6215pF @ 50V
FET Feature-
Power Dissipation (Max)138W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePower56
Package / Case8-PowerTDFN

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Datasheet & Documents

fdms86180.pdf

PDF Document · 8 pages

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