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FDMS86150ET100_1

100V|16A (Ta), 128A (Tc)|3.3W (Ta), 187W (Tc)
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MOSFET N-CH 100V 16A POWER56

Specifications

Brand
ON Semiconductor
Package
Power56
Packaging
—
Weight
—

Total Inventory

353pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how FDMS86150ET100_1 from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerON Semiconductor
SeriesPowerTrench®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C16A (Ta), 128A (Tc)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Rds On (Max) @ Id, Vgs4.85mOhm @ 16A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs62nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds4065pF @ 50V
FET Feature-
Power Dissipation (Max)3.3W (Ta), 187W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePower56
Package / Case8-PowerTDFN

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Datasheet & Documents

fdms86150et100.pdf

PDF Document · 8 pages

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