Heisener Electronics
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FDMS8050ET30_1

30V|55A (Ta), 423A (Tc)|3.3W (Ta), 180W (Tc)
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MOSFET N-CH 30V 55A 8-PQFN

Specifications

Brand
ON Semiconductor
Package
Power56
Packaging
—
Weight
—

Total Inventory

461pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how FDMS8050ET30_1 from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerON Semiconductor
SeriesPowerTrench®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C55A (Ta), 423A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs0.65mOhm @ 55A, 10V
Vgs(th) (Max) @ Id3V @ 750µA
Gate Charge (Qg) (Max) @ Vgs285nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds22610pF @ 15V
FET Feature-
Power Dissipation (Max)3.3W (Ta), 180W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePower56
Package / Case8-PowerTDFN

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Datasheet & Documents

fdms8050et30.pdf

PDF Document · 8 pages

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