Heisener Electronics
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FDMS3662_1

100V|8.9A (Ta), 49A (Tc)|2.5W (Ta), 104W (Tc)
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MOSFET N-CH 100V 8.9A POWER56

Specifications

Brand
ON Semiconductor
Package
8-PQFN (5x6)
Packaging
—
Weight
—

Total Inventory

337pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how FDMS3662_1 from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerON Semiconductor
SeriesPowerTrench®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C8.9A (Ta), 49A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs14.8mOhm @ 8.9A, 10V
Vgs(th) (Max) @ Id4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs75nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds4620pF @ 50V
FET Feature-
Power Dissipation (Max)2.5W (Ta), 104W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-PQFN (5x6)
Package / Case8-PowerTDFN

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Datasheet & Documents

fdms3662.pdf

PDF Document · 8 pages

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Datasheet Preview

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