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30V|13A, 30A|1W
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MOSFET 2N-CH 30V 13A/30A 8-PQFN
Specifications
- Brand
- ON Semiconductor
- Package
- 8-PowerTDFN
- Packaging
- —
- Weight
- —
Total Inventory
181pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how FDMS3660S-F121 from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | ON Semiconductor | |
| Series | PowerTrench® | |
| FET Type | 2 N-Channel (Dual) Asymmetrical | |
| FET Feature | Logic Level Gate | |
| Drain to Source Voltage (Vdss) | 30V | |
| Current - Continuous Drain (Id) @ 25°C | 13A, 30A | |
| Rds On (Max) @ Id, Vgs | 8mOhm @ 13A, 10V | |
| Vgs(th) (Max) @ Id | 2.7V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 29nC @ 10V | |
| Input Capacitance (Ciss) (Max) @ Vds | 1765pF @ 15V | |
| Power - Max | 1W | |
| Operating Temperature | - | |
| Mounting Type | Surface Mount | |
| Package / Case | 8-PowerTDFN | |
| Supplier Device Package | Power56 |
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Datasheet & Documents
fdms3660s-f121.pdf
PDF Document · 16 pages
