Heisener Electronics
BOM

FDMS1D2N03DSD

30V|19A (Ta), 70A (Tc), 37A (Ta), 164A (Tc)|2.1W (Ta), 26W (Tc), 2.3W (Ta), 42W (Tc)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

PT11N 30/12 & PT11N 30/12

Specifications

Brand
ON Semiconductor
Package
8-PowerWDFN
Packaging
—
Weight
—

Total Inventory

197pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how FDMS1D2N03DSD from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerON Semiconductor
SeriesPowerTrench®
FET Type2 N-Channel (Dual) Asymmetrical
FET FeatureStandard
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C19A (Ta), 70A (Tc), 37A (Ta), 164A (Tc)
Rds On (Max) @ Id, Vgs3.25mOhm @ 19A, 10V, 0.97mOhm @ 37A, 10V
Vgs(th) (Max) @ Id2.5V @ 320µA, 3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs33nC @ 10V, 117nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds1410pF @ 15V, 4860pF @ 15V
Power - Max2.1W (Ta), 26W (Tc), 2.3W (Ta), 42W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-PowerWDFN
Supplier Device Package8-PQFN (5x6)

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Datasheet & Documents

fdms1d2n03dsd.pdf

PDF Document · 13 pages

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