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100V|3.1A|1.9W
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MOSFET 4N-CH 100V 3.1A 12-MLP
Specifications
- Brand
- ON Semiconductor
- Package
- 12-WDFN Exposed Pad
- Packaging
- —
- Weight
- —
Total Inventory
124pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how FDMQ8403_1 from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | ON Semiconductor | |
| Series | GreenBridge™ PowerTrench® | |
| FET Type | 4 N-Channel (H-Bridge) | |
| FET Feature | Standard | |
| Drain to Source Voltage (Vdss) | 100V | |
| Current - Continuous Drain (Id) @ 25°C | 3.1A | |
| Rds On (Max) @ Id, Vgs | 110mOhm @ 3A, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 5nC @ 10V | |
| Input Capacitance (Ciss) (Max) @ Vds | 215pF @ 15V | |
| Power - Max | 1.9W | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Package / Case | 12-WDFN Exposed Pad | |
| Supplier Device Package | 12-MLP (5x4.5) |
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Datasheet & Documents
fdmq8403.pdf
PDF Document · 8 pages
