Heisener Electronics
BOM

FDMQ8203_1

100V, 80V|3.4A, 2.6A|2.5W
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

MOSFET 2N/2P-CH 100V/80V 12-MLP

Specifications

Brand
ON Semiconductor
Package
12-WDFN Exposed Pad
Packaging
—
Weight
—

Total Inventory

4,446pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how FDMQ8203_1 from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerON Semiconductor
SeriesGreenBridge™ PowerTrench®
FET Type2 N and 2 P-Channel (H-Bridge)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)100V, 80V
Current - Continuous Drain (Id) @ 25°C3.4A, 2.6A
Rds On (Max) @ Id, Vgs110mOhm @ 3A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds210pF @ 50V
Power - Max2.5W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case12-WDFN Exposed Pad
Supplier Device Package12-MLP (5x4.5)

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Datasheet & Documents

fdmq8203.pdf

PDF Document · 10 pages

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