Heisener Electronics
BOM

FDMJ1032C_1

20V|3.2A, 2.5A|800mW
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

MOSFET N/P-CH 20V 3.2A/2.5A SC75

Specifications

Brand
ON Semiconductor
Package
6-WFDFN Exposed Pad
Packaging
—
Weight
—

Total Inventory

454pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how FDMJ1032C_1 from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerON Semiconductor
SeriesPowerTrench®
FET TypeN and P-Channel
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C3.2A, 2.5A
Rds On (Max) @ Id, Vgs90mOhm @ 3.2A, 4.5V
Vgs(th) (Max) @ Id1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs3nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds270pF @ 10V
Power - Max800mW
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case6-WFDFN Exposed Pad
Supplier Device PackageSC-75, MicroFET

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Datasheet & Documents

fdmj1032c.pdf

PDF Document · 11 pages

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